nitarunachal@nitap.ac.in 0360-2284801
nitarunachal@nitap.ac.in 0360-2284801

Dr. Tushar Dhabal Das

Assistant Professor, Basic & Applied Science

Research Areas:

Semiconductor Electronics , OLEDs and Solar Cells

 9402617737
Address:
  • Vill- Dubrajpur,
  • P.O.-Gobradan, P.S.-Sabang
  • Dist.-Paschim Medinipur, West Bengal,
  • Pin-721642, India
View CV

Journal Publications

2022

1. Sagar Bhattarai, Rahul Pandey, Jaya Madan, Asya Mhamdi, Abdelaziz Bouazizi, Deboraj Muchahary, Dipankar Gogoi, Arvind Sharma and T. D. Das "Investigation of Carrier Transport Materials for Performance Assessment of Lead-Free Perovskite Solar Cells” ", IEEE Transactions on Electron Devices, vol. 69, pp. 3217, 2022.

2. A Sharma, S Bhattarai and T D Das "Efficiency improvement of organic light-emitting diodes device by attaching microlens arrays and dependencies on the aspect ratio ", Indian J. of Phys., , pp. 1-12, 2022. (s12648-022-02384-2)

2021

1. Sagar Bhattarai, T. D. Das "Optimization of the perovskite solar cell design to achieve a highly improved efficiency", Optical Materials , vol. 111, pp. 110661, 2021.

2. Arvind Sharma, T.D. Das "Electronic band structure and optical properties of GaAsSb/GaAs for optoelectronic device applications: A 14 band k.p study", Optical Materials , vol. 112, pp. 110734, 2021.

3. Amit Mallik, I Roy, D Chalapathi, C Narayana, T D Das, A Bhattacharya, S Bera, S Bhattacharya, Sriparna De, B Das, D Chattopadhyay "Single step synthesis of reduced graphene oxide/SnO2 nanocomposites for potential optical and semiconductor applications", Materials Science and Engineering: B, vol. 264, , pp. 114938, 2021.

4. Arvind Sharma, T. D. Das "Light extraction efficiency analysis of fluorescent OLEDs device", Optical and Quantum Electronics, vol. 83, pp. 1-11, 2021.

5. Sagar Bhattarai, T. D. Das "Optimization of carrier transport materials for the performance enhancement of the MAGeI3 based perovskite solar cell", Solar Energy, vol. 217, pp. 200–207, 2021.

6. Sagar Bhattarai, Arvind Sharma, Deboraj Muchahary, Dipankar Gogoi, T. D. Das "Numerical simulation study for efficiency enhancement of doubly graded perovskite solar cell” ", Optical Materials, vol. 118, pp. 111285, 2021.

7. Sagar Bhattarai, Arvind Sharma, Deboraj Muchahary, Monika Gogo, T. D. Das "Carrier transport layer free perovskite solar cell for enhancing the efficiency: A simulation study” ", Optik, vol. 243, pp. 167492, 2021.

8. Sagar Bhattarai, Arvind Sharma, P. K. Swain, T. D. Das "Numerical Simulation to Design an Efficient Perovskite Solar Cell Through Triple‑Graded Approach” ", Journal of Electronic Materials, vol. 50, pp. 6756, 2021.

2020

1. Sagar Bhattarai, Arvind Sharma, T.D. Das "Efficiency enhancement of perovskite solar cell by using doubly carrier transport layers with a distinct bandgap of MAPbI3 active layer", Optik - International Journal for Light and Electron Optics , vol. 224, pp. 165430, 2020.

2. Arvind Sharma and T. D. Das "Highly efficient OLED device based on the double emissive layer with an EQE about 39%", Optik - International Journal for Light and Electron Optics , vol. 221, , pp. 165350, 2020.

3. Arvind Sharma and T. D. Das "The investigation of hydrostatic pressure dependent optoelectronic properties of GaAsNBi spherical quantum dot", Materials Science in Semiconductor Processing, vol. 109, pp. 104947, 2020.

4. Arvind Sharma, Gaurav Gupta and T. D. Das "Dielectric Parameters Study of GaAs1-xSbx Alloy from Optical Interband Transition", Journal of Electronic Materials , vol. 49 , pp. 3149, 2020.

2019

1. Arvind Sharma and T. D. Das "Property of Fluorescent Host material Alq3 Organic Light Emitting Diode device", Advances and Applications in Mathematical Sciences, vol. 18, pp. 931, 2019.

2. T. Hidouri, I. Mal, D.P. Samajdar, F. Saidi, T.D. Das "Impact of localization phenomenon and temperature on the photoluminescence spectra of GaSbBi alloys and GaSbBi/GaAs quantum dots", Superlattices and Microstructures , vol. 129, pp. 252, 2019.

3. ARVIND SHARMA and T. D. DAS "Effect of strain on GaAs1−x−yNxBiy/GaAs to extract the electronic band structure and optical gain by using 16-band kp Hamiltonian", Bull. Mater. Sci., vol. 42, pp. 87, 2019.

2018

1. Alak Majumder, Pritam Bhattacharjee, Tushar Dhabal Das "A Novel Gating Approach to Alleviate Power and Ground Noise in Silicon Chips", Journal of Circuits, Systems, and Computers , vol. 27, pp. 1850146, 2018.

2. Asish Hazra, Indranil Mal, D.P. Samajdar, T. D. Das "Analytical modelling of organic solar cells with scattering interface", Optik - International Journal for Light and Electron Optics , vol. 168, pp. 747, 2018.

2017

1. Indranil Mal, D. P. Samajdar, T. D. Das "Calculation of band structure and optical gain of type-II GaSbBi/GaAs quantum wells using 14-band k•p Hamiltonian", Superlattices and Microstructures , vol. 109, pp. 442, 2017.

2. Indranil Mal, D. P. Samajdar, T. D. Das "Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs1-x-yNxSby alloys and GaAs1-x-yNxSby/GaAs quantum wells calculated using k.p Hamiltonian", Superlattices and Microstructures , vol. 106, pp. 20, 2017.

2016

1. T. D. Das, D.P. Samajdar, M.K. Bhowal, S.C. Das, S. Dhar "Photoluminesce studies of GaSbBi quantum dots grown on GaAs by liquid phase epitaxy", Current Applied Physics , vol. 16, pp. 1615, 2016.

2. D. P. Samajdar, M. K. Bhowal, T. D. Das and S. Dhar "Investigation of the below band gap infrared absorption properties of GaSbBi epitaxial layers grown on GaSb substrates", Journal of Materials Science: Materials in Electronics, vol. 27, pp. 8641, 2016.

3. D.P. Samajdar, T. D. Das, S. Dhar "Calculation of Valence Band Structure and Band Dispersion in Indium containing III–V Bismides by k.p method", Computational Materials Science, vol. 111 , pp. 497, 2016.

2015

1. Subhasis Das, Akant Sagar Sharma, T. D. Das, S. Dhar "Dependence of heavy hole exciton binding energy and the Strain distribution in GaAs1-xBix/GaAs Finite Spherical Quantum Dots on Bi content in the material", Superlattices and Microstructures , vol. 86, pp. 221, 2015.

2. D.P. Samajdar, T. D. Das, S. Dhar "Valence Band Anticrossing model for GaSb1-xBix and GaP1-xBix using k•p Method", Materials Science in Semiconductor Processing, vol. 40, pp. 539, 2015.

3. Sona Das, Dharmander Malik, Tathagata Bhowmick, Utpal Das, and Tushar D. Das "InGaAsP/InP QW Impurity Free Intermixing for Variable ZrO2 Cap Thickness", IEEE Photonics Technology Letters, vol. 27, pp. 1511, 2015.

2014

1. D. P. Datta, A. Kanjilal, B. Satpati, S. Dhara, T. D. Das, D. Kanjilal and T. Som "Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties", J. Appl. Phys. , vol. 116, pp. 033514 , 2014.

2. T. D. Das "The effect of Bi composition on the properties of InP1-xBix grown by liquid phase epitaxy ", Journal of Applied Physics , vol. 115, pp. 173107 , 2014.

3. Nripendra N. Halder, Pranab Biswas, Tushar Dhabal Das, Sanat Kr. Das, S. Chattopadhyay, D. Biswas, and P.Banerji "Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si", Journal of Applied Physics , vol. 115 , pp. 043101 , 2014.

4. S K Das, T D Das and S Dhar "Effect of post-growth anneal on the photoluminescence properties of GaSbBi", Semiconductor Science and Technology, vol. 29, pp. 015003, 2014.

2012

1. A. Mondal , N.K. Singh , P. Chinnamuthu , J.C. Dhar ,T.D. Das and P.K. Bose "Ordered Si/Si–O nanowire array and its optical properties", Applied Physics A, vol. 110, pp. 479, 2012.

2. S. C. Das, T. D. Das and S. Dhar "Infrared absorption and Raman spectroscopy studies of InSbBi layers grown by liquid phase epitaxy", Infrared Physics & Technology, vol. 55, pp. 303, 2012.

3. S. K. Das, T. D. Das, S. Dhar, M. de la Mare, and A. Krier "Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy", Infrared Physics & Technology, vol. 55 , pp. 156, 2012.

2011

1. M. de la Mare, S. C. Das, T. D. Das, S. Dhar, and A. Krier "N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy", J. Phys. D: Appl. Phys. , vol. 44 , pp. 315102, 2011.

2. S. K. Das, T. D. Das, and S. Dhar "Properties of GaAsN layers grown from melt containing Li3N as flux for enhancing nitrogen dissolution", Semiconductor Science and Technology, vol. 26 , pp. 085028 , 2011.

2010

1. A. Mondal, Mi-Ra Kim, Yeon-SikChae, Jin-Koo Rhee, S. Dhar and T. D. Das "Optical Absorption Studies of GaSbN Grown by Using Liquid Phase Epitaxy", Journal of the Korean Physical Society, vol. 56, pp. 1167-1171, 2010.

2008

1. S. Dhar, A. Mondal and T. D. Das "Hall mobility and electron trap density in GaAsN grown by liquid phase epitaxy", Semiconductor Science and Technology, vol. 23, pp. 015007, 2008.

2. S. Dhar, T. D. Das, M. de la Mare and A. Krier "Properties of dilute InAsN layers grown by Liquid phase epitaxy", Applied Physics Letter, vol. 93, pp. 071905 , 2008.

3. T. D. Das, S. Dhar and B. M. Arora "Characterization of dilute InPN layers grown by liquid phase epitaxy", Journal of Applied Physics , vol. 104, pp. 103715, 2008.

2006

1. A Mondal, T. D. Das, N Halder, S. Dhar, J. Kumar "Growth of dilute GaSbN by liquid Phase Epitaxy", Journal of Crystal Growth, vol. 297, pp. 4, 2006.