Dr. T. D. Das

Assistant Professor, Physics

Tushar Dhabal Das obtained his Ph.D degree in Electronic Science from University of Calcutta, Kolkata in 2010 where he worked in area of III-V dilute nitride semiconductor materials LPE growth and characterization, and there he has developed and advanced 10K PL system for mid-infrared to IR wavelength region. From 2011 to 2012 he worked as a Post Doctoral Fellow at ATDC, IIT Kharagpur. Later he worked as a Young Scientist Fellow at Dept. of Electronic Science, University of Calcutta from 2012 to 2015. He received his Bachelor and Master degree in Electronic Science from Vidyasagar University, West Bengal, India in 2001 and 2003, respectively. In April, 2015, he joined at National Institute of Technology, Arunachal Pradesh as an Assistant Professor and currently he is holding same position in the Department of Basic and Applied Science (Physics), NIT Arunachal Pradesh, India. His general research area is on III-V compound semiconductor nanostructure for high efficiency solar. In this field, he has been focusing on the processing, modeling, and electro-optic characterization of homo- and heterojunction solar cell materials and devices. His current research interests are focused on the design and fabrication of novel OLED/organic solar cell for renewable energy applications. He has (co-) authored 26 high-impact journal papers with 51 scientific contributions, and an active reviewer for journals & agencies.

Projects1. Principle Investigator of DST, Govt. of India Sponsored Fast Track Project, entitle “Growth and Characterization of Dilute III-V-bismide Materials for IR and Mid IR devices” (SR/FTP/PS-089/2010 dt. 08/07/2011: Amount23,04,000/-) 2012-2015. Dept. of Electronic Science, CU, Kolkata.

2. PI of NIT-AP startup grand “Design of Solar Electric Bicycle System₹5,00,000/- 2016-17, g at Dept. of BAS,NIT-AP

3.  Principle Investigator of SERB,DST, Govt. of India Sponsored EMR Project “Synthesis of Triazolopyrimidine-based iridinium (III) complexes: Application to the Fabrication of OLEDs₹50,92,560/- Running at Dept. of BAS(Physics), NIT-AP

Publications:

Journals:

  1. Growth of dilute GaSbN by liquid Phase Epitaxy”, A Mondal, T. D. Das, N Halder, S. Dhar, J. Kumar,Journal of Crystal Growth 297, 4(2006)
  1. Characterization of dilute InPN layers grown by liquid phase epitaxy” T. D. Das, S. Dhar and B. M. Arora, Journal of Applied Physics 104, 103715 (2008)
  2. Properties of dilute InAsN layers grown by Liquid phase epitaxy” S. Dhar, T. D. Das, M. de la Mare and A. Krier, Applied Physics Letter 93, 071905 (2008)
  3. “Hall mobility and electron trap density in GaAsN grown by liquid phase epitaxy”, S Dhar, A Mondal and T D Das, Semiconductor Science and Technology 23 ,015007(2008)
  1. Optical Absorption Studies of GaSbN Grown by Using Liquid Phase Epitaxy”, A. Mondal, Mi-Ra Kim, Yeon-SikChae, Jin-Koo Rhee, S. Dhar and T. D. Das, Journal of the Korean Physical Society, 56, No. 4, April 2010.
  1. Li3N used as flux to increase the nitrogen content in GaAsN layers grown by liquid phase epitaxy” S. K. Das, T. D. Das, and S. Dhar, Semicond. Sci. Technol. 26, 085028 (2011)
  2. “N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy” M. de la Mare, S. C. Das, T. D. Das, S. Dhar, and A. Krier, Phys. D: Appl. Phys. 44 ,315102 (2011)
  3. “Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy”, S. K. Das, T. D. Das, S. Dhar, M. de la Mare, and A. Krier, Infrared Physics & Technology, 55 ,156(2012)
  1. Optical absorption and Raman spectroscopy studies of InSbBi layers grown by liquid phase epitaxy”, S. C. Das, T. D. Das and S. Dhar, Infrared Physics & Technology, 55,303(2012)
  2. “Ordered Si/Si–O nanowire array and its optical properties”, A. Mondal , N.K. Singh , P. Chinnamuthu , J.C. Dhar ,T. D. Das and P.K. Bose, Applied Physics A, 110,479(2012)
  1. “Effect of post-growth anneal on the photoluminescence properties of GaSbBi”, S K Das, T D Das and S Dhar, Semicond. Sci. Technol.29,015003(2014)
  1. “Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si” , Nripendra N. Halder, Pranab Biswas, Tushar Dhabal Das, Sanat Kr. Das, S. Chattopadhyay, D. Biswas, and P.Banerji, Journal of Applied Physics 115, 043101 (2014)
  1. The effect of Bi composition on the properties of InP1-xBix grown by liquid phase epitaxy ” T. D. Das, Journal of Applied Physics 115, 173107 (2014)
  2. Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties”, P. Datta, A. Kanjilal, B. Satpati, S. Dhara, T. D. Das, D. Kanjilaland T. Som, J. Appl. Phys. 116, 033514 (2014)
  3. InGaAsP/InP QW Impurity Free Intermixing for Variable ZrO2 Cap Thickness”, Sona Das, Dharmander Malik, Tathagata Bhowmick, Utpal Das, and Tushar D. Das, IEEE Photonics Technology Letters, 27,1511(2015)
  1. Valence Band Anticrossing model for GaSb1-xBix and GaP1-xBix using k·p Method”, D.P. Samajdar, T. D. Das, S. Dhar, Materials Science in Semiconductor Processing, 40,539(2015)
  1. Dependence of heavy hole exciton binding energy and the Strain distribution in GaAs1-xBix/GaAs   Finite Spherical Quantum Dots on Bi content in the material”, SUBHASIS DAS; AKANT S SHARMA; TUSHAR D DAS; SUNANDA DHAR, Superlattices and Microstructures, 86 , 221 (2015)
  1. “Calculation of Valence Band Structure and Band Dispersion in Indium containing III–V Bismides by k.p method”, D.P. Samajdar, T. D. Das, S. Dhar, Computational Materials Science 111, 497 (2016)
  1. “Investigation of the below band gap infrared absorption properties of GaSbBi epitaxial layers grown on GaSb substrates” D. P. Samajdar, M. K. Bhowal, T. D. Das and S. Dhar, J Mater Sci: Mater Electron, Springer, 2016
  1. “Photoluminesce studies of GaSbBi quantum dots grown on GaAs by liquid phase epitaxy” T. D. Das, D.P. Samajdar, M.K. Bhowal, S.C. Das, S. Dhar, Current Applied Physics 16, 1615 (2016)
  1. Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs1-x-yNxSby alloys and GaAs1-x-yNxSby/GaAs quantum wells calculated using k.p Hamiltonian”, Indranil Mal, D. P. Samajdar, T. D. Das, Superlattices and Microstructures 106, 20 (2017)
  1. Calculation of band structure and optical gain of type-II GaSbBi/GaAs quantum wells using 14-band k·p Hamiltonian”, Indranil Mal, D. P. Samajdar, T. D. Das, Superlattices and Microstructures 109,442 (2017)
  1. “Analytical modelling of organic solar cells with scattering interface”, Asish Hazra, Indranil Mal, D.P. Samajdar, T. D. Das, Optik – International Journal for Light and Electron Optics 168,747 (2018)
  1. “A Novel Gating Approach to Alleviate Power and Ground Noise in Silicon Chips”, Alak Majumder, Pritam Bhattacharjee, Tushar Dhabal Das, Journal of Circuits, Systems, and Computers 27, 1850146(2018)
  1. Effect of strain on GaAs1−x−yNxBiy/GaAs to extract the electronic band structure and optical gain by using 16-band kp Hamiltonian”, ARVIND SHARMA and T. D. DAS, Bull. Mater. Sci. (2019) 42: 87. https://doi.org/10.1007/s12034-019-1793-5
  2. Impact of localization phenomenon and temperature on the photoluminescence spectra of GaSbBi alloys and GaSbBi/GaAs quantum dots”, Hidouri, I. Mal, D.P. Samajdar, F. Saidi, T. D. Das, Superlattices and Microstructures 129, 252–258(2019)

Conferences/Workshop:

  1. “Property of Fluorescent Host material Alq3 Organic Light Emitting Diode device” ,Arvind Sharma and T. D. Das

2nd International Conference on Communication, Devices and Computing (ICCDC 2019) March 14-15, 2019; Dept. of ECE, Haldia Institute of Technology, WB, India

  1. “Nanostructure of III-V Dilute Bismide Materials for Photovoltaic Devices”, T. D. Das and D. P. Samajdar

8th International Workshop on Bismuth-Containing Semiconductors July 23rd- 26th, 2017,Philipps­University Marburg, Germany

  1. “Effect of active layer on optical properties of polymer OLEDs”, Dileep Kumar, T. D. Das, EMCA-2017 15th 17th March, 2017 by NIT Durgapur , Material Today: proceeding.
  1. A 90 nm leakage control transistor based clock gating for low power flip flop applications”, Pritam Bhattacharjee, Alak Majumder, Tushar Dhabal Das

IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS), 16-19 October 2016, Abu Dhabi, UAE

  1. “Valence Band Anticrossing model for InAs1-xBix by k·p method”, D. P. Samajdar, T. D. Das, and S. Dhar

Foundations and Frontiers in Computer, Communication and Electrical Engineering,Proceedings of the 3rd International Conference C2E2, Mankundu, West Bengal, India, 15th-16th January, 2016,CRC Press 2016,Pages 437–440

  1. “Computational Investigation to Improve the External Quantum Efficiency of Thin Film Tandem
    Solar Cell.”
    , Pritam Dey, Ashish Prajapati, Jivesh Verma, T. D. Das

IEEE 3rd International Conference on ELECTRONICS AND COMMUNICATION SYSTEMS (ICECS-16), Karpagam College of Engineering, Coimbatore

  1. “Multi BSF Layer InGaP/GaAs High Efficiency Solar Cell”, Jivesh Verma, Pritam Dey, Ashish Prajapati, T. D. Das

IEEE International Conference on Microelectronics, Computing and Communication, (MicroCom 2016), NIT, DURGAPUR.

  1. “The Effect of Mole-fraction on Power Spectral Density of Single Quantum well based InxGa1-xN/GaN Blue Light Emitting Diode.”, Ashish Prajapati, Pritam Dey, T. D. Das

IEEE International Conference on Microelectronics, Computing and Communication (MicroCom 2016), NIT, DURGAPUR.

  1. “MEH – PPV Thickness Variations for High Luminescent Power OLED”, Aditya Sharma and T. D. Das, Presented at IWPSD 2015, IISC, Bangalore
  1. “Effect of bismuth incorporation on the Growth Kinetics and Valence Band Structure for InP1-xBix grown using Liquid Phase Epitaxy”, D.P. Samajdar, T. D. Das and S. Dhar

In book: Recent Trends in Materials and Devices Proceedings ICRTMD 2015, Edition: 1, Publisher: Springer International Publishing

  1. “Liquid Phase Epitaxial Growth and Low Temperature Photoluminescence of InPBi and GaSbBi”, T. D. Das, D. P. Samajdar, M. K. Bhowal and S. Dhar, Presented at IWPSD2015, IISC, Bangalore
  1. “Low Temperature Photoluminescence of III-V Bismide grown by Liquid Phase Epitaxy” T. D. Das, D. P. Samajdar, M. K. Bhowal and S. Dhar, Proceedings of the Internal Conferences on Condensed Matter Physics-ICCMP2014, Himachal Pradesh University, Shimla.
  1. Characterization of InP1-xBix Alloy grown by Liquid Phase Epitaxy”, T. D. Das,Proceedings of the International Workshop on the Physics of Semiconductor Devices 2013,(IWPSD-2013),India Publish in Springer 2014
  1. Calculation of direct E0 energy gaps for III-V Bi alloys using Quantum dielectric theory”, D. P. Samajdar, T. D. Das and S. Dhar, Proceedings of the International Workshop on the Physics of Semiconductor Devices 2013,(IWPSD-2013),India Publish in Springer 2014
  1. “Bi incorporation in GaSbBi films grown by liquid phase epitaxy”, S. K. Das, T. D. Das and S. Dhar, Proceedings of the International Workshop on the Physics of Semiconductor Devices 2013,(IWPSD-2013),India Publish in Springer 2014
  1. “MOCVD Growth and Characterization of thermally stable GaAs epi-layers for IC Applications”, N.N.Halder, S.Mangal, T. D. Das, P. Banerji and D. Biswas, Proceedings of the International Workshop on the Physics of Semiconductor Devices 2012,(IWPSD-2012),India
  1. InSbBi layers grown by liquid phase epitaxy”, Sunanda Dhar, Sanat Das, and Tushar Das, Presented at ICMAT2011, Singapore
  1. Infrared Photoluminescence of Dilute GaSb:Bi Alloys Grown by Liquid Phase Epitaxy”, Martin de la mare, Sanat Das, Tushar Das, Sunanda Dhar, and Anthony Krier,  Presented at ICMAT2011, Singapore
  1. Properties of GaAsN layers grown from melt using Li3N as flux”.Sunanda Dhar, Sanat Das, and Tushar Das, Presented at ICMAT2011, Singapore
  1. Liquid Phase Epitaxial growth of GaSbBi and it’s characterization”,S Das, T. D. Das, S.Dhar, M. de la Mare, and A. KrierProceedings of the 10th International Conference on Optoelectronics, Fibre Optics, and Photonics (PHOTONICS-2010), IIT Guwahati, India,P502
  1. Band gap reduction in GaAsN layers grown by liquid phase epitaxy using Li3N as flux”S. Das, T. D. Das, and S. Dhar

Proceedings of the 10th International Conference on Optoelectronics, Fibre Optics, and Photonics (PHOTONICS-2010), IIT Guwahati, India, P501

  1. Room temperature luminescence from InAsN layers grown by liquid phase epitaxy”S. Das, T. D. Das, S. Dhar, M. de la mare, and A. Krier

Proceedings of the International Workshop on the Physics of Semiconductor Devices 2009, (IWPSD-2009),India, P262

  1. Properties of Dilute InPN Alloys Grown by Liquid Phase EpitaxyTushar Dhabal Das, Sunanda Dhar, and Brij Mohan AroraProceedings of the International Conference on Materials for Advanced Technologies2009, (ICMAT-2009), Singapore, P164
  1. Liquid Phase Epitaxial Growth of Dilute InAsN Layers from Bi Solvents”Martin de la Mare, Tushar Dhabal Das, Sunanda Dhar, and Anthony KrierProceedings of the International Conference on Materials for Advanced         Technologies2009,(ICMAT-2009), Singapore, P78
  1. Bandgap reduction in dilute InPN grown by liquid phase epitaxy”T. Das, S. C. Das, and S. Dhar

2nd National Workshop on Advanced Optoelectronic Materials and Devices (AOMD-2008),India

  1. Novel LPE Technique for the Growth of Dilute III-V-nitride materials”Dhar, T. D. Das, A. Mondal and N. Halder

National Workshopon Advanced Optoelectronic Materials and Devices (AOMD-2007),India

  1. Physical and Electrical Properties of Dilute GaAsN and InAsN Layers Grownby Liquid Phase Epitaxy”    T. Das, A. Mondal and S.DharProceedings of the International Workshop on the Physics of Semiconductor Devices(IWPSD2007) (pp511-513),IIT Bombay, India
  1. Characteristics of dilute GaSbN and InGaAsSbN layers grown by liquid phase epitaxy”S.Dhar, A.Mondal and T.D.Das

Proceedings of theInternational Conference on Materials for Advanced Technologies, (ICMAT 2007) Singapore

  1. Transport properties of GaAsN layers grown by liquid phase epitaxy”Dhar, A.Mondal and T. D. Das

Proccedings of the International Conference on Materials for Advanced Technologies, (ICMAT-2007) Singapore

  1. Band gap reduction in dilute GaSbN layers, grown by liquid phase epitaxy”Mondal, T. D. Das, and S. Dhar

Proceedings of the Eight International Conference on Optoelectronics, Fiber Optics, and Photonics , Hyderabad (2006)

  1. Characteristics of dilute GaSbN layers, grown by liquid phase epitaxy”Mondal, T. D. Das, and S. Dhar

Proceedings of the International Conference on Computers and Devices for Communication (CODEC- 2006), University of Calcutta, Kolkata

  1. Growth of InGaAsSb and InGaAsSbN layers by liquid phase epitaxy”T. Das and S. Dhar

Proceedings of the International Conference on Computers and Devices for Communication   (CODEC-2006), University of Calcutta, Kolkata

Research Fellows

1. Mr. Pritam Bhattacharjee under Visvesvaraya PhD Scheme,2016- Submitted

  1. Mr. Arvind Sharma under SERB Sponsored Project, 2019-Running
  2. Mr. Sagar Bhattarai under TEQIP-III, 2019- Running
  • Former P.G. Students:
  1. Aditya Sharma (M.Tech in EDM, 2016) “Study of Organic Light Emitting Diode using Silvaco Simulator
  2. Pritam Dey (M.Tech in EDM, 2016) “Simulation of High Efficient Multi Junction Solar Cell”
  3. Jivesh Verma (M.Tech in EDM, 2016) “Designing of High Efficiency Multi-BSF III-V Solar Cell”
  4. Ashish Prajapati (M.Tech in EDM, 2016) “Optoelectronics Nature of III-V LEDs and LDs”
  5. Indranil Mal (M.Tech in MCC,2017) “Studies on III-V dilute nitride, bismide and antimonide alloys using k.p Hamiltonian”
  6. Sushma Pandey ( M.Tech in MCC,2017) “Optimization of optical and electrical behavior of quantum well based LEDs and LDs
  7. Asish Hazra (M.Tech in MCC,2017) “Effect of optical scattering interface in organic solar cells
  8. Dileep Kumar (M.Tech in MCC, 2017) “Effects of active layer thickness on optical properties of polymer OLEDs
  9. Smriti Baruah (M.Tech in EDM, 2017) “Light extraction efficiency enhancement in single quantum well infrared light emitting diode
  10. Shubham Kumar Kaushik (M.S. in Electronic Science,2018) “Voice Control Drone UAV using IoT
  11. Mr. Saurabh Kumar (M.S. in Electronic Science,2018) Miller Indices Display Formation in 6×6×6 LED Cube Using Arduino Mega”
  12. Suraj Prasad (M.S. in Electronic Science,2018) Growth and Fabrication of InGaN/AlN nanostructures for Gas Sensing application” co-guide
  13. Arvind Sharma (M.S. in Electronic Science,2018) To Develop Highly Reflective Low Contact Resistance on p-GaN” co-guide
  14. Subrat Kumar Pradhan (M.Sc. in Electronic Science,2018) Design Study of High power Pseudospark Switch for Pulse Power application” co-guide
  15. Kalung Chatung (MS in Mathematical Physics,2018) “14 Band Model to Study band Structure and other Properties of GaAsBi/GaAs”
  16. Pulak Kakati (MS in Mathematical Physics,2018) “Theoretical Investigation on PIN Diode and LED Devices using III-V compound semiconductors”
  17. Shalom Frandev (M.Sc. in Mathematical Physics,2019) “Calculation of the GaAsBi alloy electrical and GaAsBi/GaAs quantum well optical properties using 14-band k.p Model”
  18. Nada Rima (M.Sc. in Mathematical Physics,2019) “ Modelling and Simulation of Alq3 organic light emitting Diode device”
  19. Sagar Bhattari (M.Sc. in Mathematical Physics,2019) “Calculation of the band structure, effective mass and spontaneous emission of GaAsBi using 14 band k.p Hamiltonian”
  20. Tarak Rimi (M.Sc. in Mathematical Physics,2019) “Design and Simulation of Organic Solar Cell: ITO/PEDOT/MDMO-PPV/ZnO/Al Structure”
  • Former Undergraduate Students:
  1. Gurram Manisha (B. Tech in ECE,2016) : “Low-Cost Solar Collector for Steam Power Generation”
  2. Towsif Khan(B. Tech in ECE,2016)
  3. Mintu Das(B. Tech in ECE,2016)

 

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Faculty Information